Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-04-02
2011-11-08
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE29069, C257SE29072, C257SE29273
Reexamination Certificate
active
08053760
ABSTRACT:
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer includes a carbon nanotube structure comprised of carbon nanotubes. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The carbon nanotube structure is connected to both the source electrode and the drain electrode, and an angle exist between each carbon nanotube of the carbon nanotube structure and a surface of the semiconductor layer, and the angle ranges from about 0 degrees to about 15 degrees.
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Fan Shou-Shan
Jiang Kai-Li
Li Qun-Qing
Liu Chang-Hong
Altis Law Group, Inc.
Hon Hai Precision Industry Co. Ltd.
Patton Paul
Smith Zandra
Tsinghua University
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