Thin film transistor

Details Thin film transistor Thin film transistor

2009-02-17

2010-10-12

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S057000, C257S066000

Reexamination Certificate

active

07812344

ABSTRACT:
A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region.

REFERENCES:
patent: 2005/0001210 (2005-01-01), Lee et al.
patent: 2005/0026083 (2005-02-01), Ron

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