Thin film transistor

Optical: systems and elements – Prism – With reflecting surface

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357 2, 357 4, 359 59, 359 87, H01L 2978

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active

050558994

ABSTRACT:
A thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor layer, which have the same shape and the same size and stacked one upon another. The transistor further comprises an n-type semiconductor layer formed on the semiconductor layer, an ohmic electrode formed on the n-type semiconductor layer, and a source electrode and a drain electrode both formed on the ohmic electrode. Further, a transparent electrode is electrically connected to the source electrode. The thin film transistor has no step portions. Therefore, the transistor can be manufactured with high yield, and forms a pixel having a high opening ratio.

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