Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-02-01
2005-02-01
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257S347000
Reexamination Certificate
active
06849872
ABSTRACT:
An improved type thin film semiconductor device and a method for forming the same are described. That is, in a thin film semiconductor device such as TFT formed on an insulating substrate, it is possible to prevent the intrusion of a mobile ion from a substrate or other parts, by forming the first blocking film comprising a silicon nitride, an aluminum oxide, an aluminum nitride, a tantalum oxide, and the like, under the semiconductor device through an insulating film used in a buffering, and then, by forming the second blocking film on TFT, and further, by covering TFT with the first and second blocking films.
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Written Notice of Reasons for Revocation, mailed Apr. 20, 2004, Opposition No. 2003-71422, JP Patent No. 3352998, Japanese Patent Office.
English Translation of Written Notice of Reasons for Revocation, Opposition No. 2003-71422, mailed Apr. 20, 2004, JP Patent No. 3352998, Japanese Patent Office.
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Takemura Yasuhiko
Yamazaki Shunpei
Loke Steven
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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