Thin-film transistor

Details Thin-film transistor Thin-film transistor

1993-10-15

1996-06-18

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 69, 257 72, H01L 2976, H01L 27108, H01L 2904

Patent

active

055280552

ABSTRACT:
A thin-film transistor of an inverted-staggered structure includes a semiconductor layer with a channel portion, a protective insulating film extending on the channel portion of the semiconductor layer, a source electrode, and a drain electrode. The protective insulating film has a rectangular shape with four corners, and each of two of the corners overlaps one of the source electrode and the drain electrode while two others of the corners overlap neither the source electrode nor the drain electrode. The thin-film transistor may be modified so that one of the corners overlaps one of the source electrode and the drain electrode while three others of the corners overlap neither the source electrode nor the drain electrode.

REFERENCES:
patent: 4772927 (1988-09-01), Saito et al.
patent: 5036370 (1991-07-01), Miyago et al.
patent: 5103274 (1992-04-01), Tang et al.
patent: 5140403 (1992-08-01), Hikichi et al.
patent: 5156986 (1992-10-01), Wei et al.
"A TFT Array With TaOx/SiNx Double Layered Insulator For Liquid Crystal Displays" by T. Kawaguchi et al: ITEJ Technical Report, vol. 12, No. 50: Nov. 1988: pp. 7-12.

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