Thin film transistor

Details Thin film transistor Thin film transistor

2008-05-20

2008-05-20

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S059000, C257S072000, C257SE29289

Reexamination Certificate

active

07375372

ABSTRACT:
A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over the substrate. An inter-gate dielectric layer is formed over the substrate covering the gate. A doped amorphous silicon layer is formed over a portion of the inter-gate dielectric layer at least covering the gate to serve as channel layer. Next, source/drain regions are formed over the channel layer.

REFERENCES:
patent: 6683333 (2004-01-01), Kazlas et al.
patent: 2004/0046171 (2004-03-01), Lee et al.
patent: 2004/0188685 (2004-09-01), Lin et al.

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