Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-01-04
2011-01-04
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S057000, C257S059000, C257S066000, C257S069000, C257S347000, C257S350000, C257S354000, C257SE39020, C257SE29006, C257SE29242, C438S166000, C438S486000, C438S489000, C438S479000, C438S482000, C438S660000, C438S684000
Reexamination Certificate
active
07863621
ABSTRACT:
A thin film transistor includes a semiconductor layer formed on a polycrystalline silicon layer crystallized by a super grain silicon (SGS) crystallization method. The thin film transistor is patterned such that the semiconductor layer does not include a seed or a grain boundary created when forming the semiconductor layer on the polycrystalline silicon layer.
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Abstract of Korean Patent Publication No. 2004-34270.
Lee Ki-Yong
Park Byoung-Keon
Seo Jin-Wook
Yang Tae-Hoon
Gurley Lynne A
Li Meiya
Samsung Mobile Display Co., Ltd.
Stein McEwen, LLP
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