Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-07-09
1997-04-08
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257347, 257349, 257900, 257412, H01L 2904
Patent
active
056190450
ABSTRACT:
A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided on the side and the upper face of said gate electrode, and the anodic oxide on the side of the gate electrode is formed thicker than the anodic oxide formed on the upper face. Also claimed is a process for fabricating the above thin film transistor improved in device characteristics and product yield, which comprises forming a gate electrode with an anodically oxidizable material having thereon a masking material, providing a relatively thick porous anodic oxide film on the side of the gate electrode by anodic oxidation effected under a relatively low voltage, then forming a dense anodic oxide film on at least the upper face of the gate electrode after removing the masking material, and introducing impurities into the semiconductor layer using the gate electrode portion having thereon the anodic oxide films as a mask.
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U.S. Application Serial No. 08/219,378 to Konuma, entitled "An Insulated Gate Field Effect Transistor With An Anodic Oxidized Gate Electrode", filed Mar. 29, 1994.
Konuma Toshimitsu
Sugawara Akira
Tsuji Takahiro
Butts Karlton C.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minhloan
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