Thin film transistor

Details Thin film transistor Thin film transistor

1993-01-28

1994-12-06

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 57, 257 61, 257 72, H01L 2701, H01L 2713, H01L 2978

Patent

active

053713982

ABSTRACT:
A thin film transistor comprising a gate electrode of electrically conductive material, a semiconducting material, a gate insulating material located between the gate electrode and the semiconducting material, a source electrode of electrically conductive material adjacent to the semiconducting material, a drain electrode of electrically conductive material adjacent to the semiconducting material, and a light intercepting material for preventing the incidence of light on the semiconducting material wherein the light interrupting material layer is formed of the same electrically conductive material as the source electrode and the drain electrode.

REFERENCES:
patent: 4678282 (1987-07-01), Yaniv et al.
patent: 4680085 (1987-07-01), Vijan et al.
patent: 4698494 (1987-10-01), Kato et al.
patent: 4885616 (1989-12-01), Ohta
patent: 4889983 (1989-12-01), Numano et al.

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