Thin film transistor

Details Thin film transistor Thin film transistor

1992-01-07

1993-07-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 65, 257 66, 257192, H01L 2701, H01L 2713, H01L 2778

Patent

active

052312976

ABSTRACT:
A thin film transistor with a noncrystalline semiconductor film, wherein an amorphous semiconductor in a position corresponding to a channel between a source electrode and a drain electrode is polycrystallized, while on both side areas or around the polycrystallized area remains amorphous. The thin film transistor may be a noncrystalline semiconductor film with a heterojunction between a channel area and a source and drain area.

REFERENCES:
patent: 4514895 (1985-05-01), Nishimura
patent: 4558340 (1985-12-01), Schachter et al.
patent: 4849797 (1989-07-01), Ukai et al.
patent: 4954855 (1990-09-01), Mimura et al.
patent: 4959700 (1990-09-01), Yamazaki
Laser-Recrystallized Polycrystalline-Silicon Thin-Film Transistors with Low Leakage Current and High Switching Ratio, IEEE Electron Device Letters, vol. EDL-8, No. 9, Sep., 1987, pp. 425-427.
Kruangam et al., "Visible Light a-SIC Multilayered Thin Film LED", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 683-686.
Hewig et al., "Optical Properties and Theoretical Model of the Cu.sub.x S-CdS Heterojunction", pp. 441-444.

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