Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-10-28
1999-02-09
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257346, 257345, 257347, 438156, 438158, 438163, H01L 2976
Patent
active
058698477
ABSTRACT:
A thin film transistor (TFT) comprises a n.sup.+ source region and a p.sup.+ drain separated by an undoped offset region, or the complementary structure with a p.sup.+ source and a n.sup.+ drain. By means of this arrangement in the offset region is conduction is by way of both electron and hole carriers and the offset region is conductivity modulated. The TFT of the present invention has lower on-resistance than a conventional thin film transistor.
REFERENCES:
patent: 5122846 (1992-06-01), Haken
patent: 5182624 (1993-01-01), Tran et al.
patent: 5294811 (1994-03-01), Aoyama et al.
patent: 5430320 (1995-07-01), Lee
patent: 5444271 (1995-08-01), Kulwahara et al.
Kottarath Parambil Anish Kumar
Sin Johnny Kin-On
Wong Man
Martin-Wallace Valencia
The Hong Kong University of Science & Technology
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