Thin film transistor

Details Thin film transistor Thin film transistor

1985-12-16

1987-07-07

Wojciechowicz, Edward J.

357 2, 357 15, 357 55, 357 63, 357 59, H01L 2980

Patent

active

046790624

ABSTRACT:
An impurity-doped amorphous silicon semiconductor layer is deposited on a substrate, source and drain electrodes are deposited apart from each other on the amorphous silicon semiconductor layer in ohmic contact therewith and a gate electrode is deposited on the amorphous silicon semiconductor layer in Schottky contact therewith between the source and drain electrodes, thereby forming a thin film transistor.

REFERENCES:
patent: 4489149 (1984-12-01), Kawamura et al.
patent: 4532536 (1985-07-01), Hatanaka
patent: 4558340 (1985-12-01), Schachter et al.

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