Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1984-05-07
1986-09-02
Edlow, Martin H.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257 2, 257 4, 257 61, H01L 2978
Patent
active
046099301
ABSTRACT:
A thin film transistor of amorphous silicon is supported by an insulated gate on an insulating substrate and has the opposite side covered with a shading layer of amorphous silicon containing germanium in an amount more than 30% atomic density.
REFERENCES:
patent: 4065781 (1977-12-01), Gutknecht
patent: 4119992 (1978-10-01), Ipri
patent: 4342044 (1982-07-01), Ovshinsky
Hayama, Appl. Phys. Lett., 36(9) (May 1, 1980), pp. 754-755.
Fang, IBM Tech. Discl. Bull., vol. 20, No. 12 (May 1978), p. 5352.
Adams Bruce L.
Burns Robert E.
Edlow Martin H.
Lobato Emmanuel J.
Seiko Instruments & Electronics Ltd.
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