Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-11-27
1998-11-03
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257382, 257763, 257771, H01L 2904
Patent
active
058312811
ABSTRACT:
A thin film transistor of this invention includes: a source and drain regions formed on an insulating base region; and a conductive layer connected to the source and drain regions. The conductive layer has a layered structure of an Al-containing metal film and an N-containing Mo film.
REFERENCES:
patent: 4161430 (1979-07-01), Sogo
patent: 4684536 (1987-08-01), Zega
patent: 5264071 (1993-11-01), Anthony et al.
patent: 5604360 (1997-02-01), Zhang et al.
Y. Ozaki et al., Japanese Laid-Open Patent Publication No. 6-104241, Laid open on Apr. 15, 1994, with partial English translation.
Kurogane Saori
Sakamoto Hiromi
Sharp Kabushiki Kaisha
Whitehead Carl W.
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