Thin film transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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Details

257382, 257763, 257771, H01L 2904

Patent

active

058312811

ABSTRACT:
A thin film transistor of this invention includes: a source and drain regions formed on an insulating base region; and a conductive layer connected to the source and drain regions. The conductive layer has a layered structure of an Al-containing metal film and an N-containing Mo film.

REFERENCES:
patent: 4161430 (1979-07-01), Sogo
patent: 4684536 (1987-08-01), Zega
patent: 5264071 (1993-11-01), Anthony et al.
patent: 5604360 (1997-02-01), Zhang et al.
Y. Ozaki et al., Japanese Laid-Open Patent Publication No. 6-104241, Laid open on Apr. 15, 1994, with partial English translation.

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