Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reissue Patent
1998-03-31
2010-10-05
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S027000, C438S666000, C438S029000, C438S054000, C257SE29071, C257SE29103, C257SE23067, C257SE23081, C257SE23082, C257S930000, C257S084000, C257S094000, C257S470000
Reissue Patent
active
RE041801
ABSTRACT:
Adelete-start id="DEL-S-00001" date="20101005" ?termoelectricdelete-end id="DEL-S-00001" ?insert-start id="INS-S-00001" date="20101005" ?thermoelectricinsert-end id="INS-S-00001" ?device and method for manufacturing the thermoelectric device. Thedelete-start id="DEL-S-00002" date="20101005" ?thermoelectricdelete-end id="DEL-S-00002" ?insert-start id="INS-S-00002" date="20101005" ?thermoelectricinsert-end id="INS-S-00002" ?device includes at least one deposited film of a thermoelectric material having opposed first and second major surfaces separated by a thickness of the at least one deposited film with the at least one deposited film being patterned to define a plurality of thermoelements arranged in a matrix pattern having rows of alternating conductivity type, a first header having formed thereon a first interconnecting member with the first header mounted on the first major surface of the deposited film such that the first interconnecting member is connected to one side of the plurality of thermoelements and connects adjacent thermoelements of an opposite conductivity type, and a second header having formed thereon a second interconnecting member with the second heads mounted on the second major surface of the deposited film such that the second interconnecting member is connected to an opposite side of said plurality of thermoelements and connects adjacent thermoelements of an opposite conductivity type.
REFERENCES:
patent: 3076051 (1963-01-01), Haba
patent: 3261079 (1966-07-01), Clingman, Jr. et al.
patent: 3379577 (1968-04-01), Bird, Jr.
patent: 3781176 (1973-12-01), Penn et al.
patent: 3930303 (1976-01-01), Alais et al.
patent: 4054478 (1977-10-01), Linnon
patent: 4081895 (1978-04-01), Germano et al.
patent: 4149025 (1979-04-01), Niculescu
patent: RE30652 (1981-06-01), Germano et al.
patent: 4343960 (1982-08-01), Eguchi et al.
patent: 4444991 (1984-04-01), Beale
patent: 4493939 (1985-01-01), Blaske et al.
patent: 4902648 (1990-02-01), Ohta et al.
patent: 4971632 (1990-11-01), Rowe
patent: 4983225 (1991-01-01), Rowe
patent: 5006505 (1991-04-01), Skertic
patent: 5286304 (1994-02-01), Macris et al.
patent: 5411599 (1995-05-01), Horn et al.
patent: 5415699 (1995-05-01), Harman
patent: 5416046 (1995-05-01), Wang
patent: 5436467 (1995-07-01), Elsner et al.
patent: 5900071 (1999-05-01), Harman
patent: 5952728 (1999-09-01), Imanishi et al.
patent: 5956569 (1999-09-01), Shiu et al.
patent: 6060656 (2000-05-01), Dresselhaus et al.
patent: 6107645 (2000-08-01), Hidaka
patent: 6365821 (2002-04-01), Prasher
patent: 0447 020 (1991-09-01), None
Integrated Thin Film −++Thermoelectric Cooler, Gao Min et al., Electronics Lettters, Jan. 22, 1998, vol. 34, No. 2, pp. 222-223.
Potential of Si-based Superlattice Thermoelectric Materials for Integration with Si Microelectronics, Rama Venkatasubramanian et al., Research Triange Institute, 1998 IEEE, p. 869.
In-Plane Thermoelectric Properties of Freestanding Si/Ge Superlattice Structures, Rama Venkatasubramanian et al., Research Triangle Institute, 17thInternational Conference on Thermoelectrics (1998), 1998 IEEE, pp. 191-197.
Experimental Evidence of High Power Factors and Low Thermal Conductivity in Bi2Te3/Sb2Te3Superlattice Thin-Films, Rama Venkatasubramanian et al., Research Triangle Institute, 15thInternational Conference on Thermoelectrics (1996) IEEE, pp. 454-458.
Electronic and Mechanical Properties of Ge Films Grown on Glass Substrates, R,K. Ahrenkiel et al. National Renewable Energy Laboratory, Rama Venkatasubramanian, Research Triangle Institute, 26thPVSC; Sep. 30-Oct. 3, 1997; Anaheim, CA, pp. 527-529.
MOCVD Of Bi2Te3Sb2Te3and Their Superlattice Structures for Thin-Film Thermoelectric Applications, Rama Venkatasubramanian et al., Research Triangle Institute, Journal of Crystal Growth 170 (1997) 817-821.
A Silent Cool: Thermoelectrics May Offer New Ways To Refrigerate and Generate Power, Corinna Wu, Science Service, Inc., Science News, Sep. 6, 1997 v152 n10 p152(2), pp. 1-3.
Semiconductor Devices Physics and Technology, Integrated Devices, pp. 468-470, John Wiley & Sons, 1985.
Thin-Film Superlattice and Quantum-Well Structures—A New Approach to High-Performance Thermoelectric Materials, Rama Venkatasubramanian, Naval Research Reviews, Center for Superconductor Research, Research Triangle Institute, 1996, pp. 31-41.
Lebentritt Michael S
Myers Bigel Sibley & Sajovec P.A.
Nextreme Thermal Solutions, Inc.
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