Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor
Reexamination Certificate
1999-11-03
2001-10-09
Lebentritt, Michael (Department: 2824)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Packaging or treatment of packaged semiconductor
C438S029000, C438S054000, C257S930000, C257S084000, C257S094000, C257S470000
Reexamination Certificate
active
06300150
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to thin-film thermoelectric devices and methods of manufacturing such devices, and particularly to thin-film thermoelectric devices with high utilization efficiency and high cooling/packing density and methods of manufacturing such devices.
2. Discussion of the Background
Thermoelectric thin films have been used to form high-performance thermoelectric devices. Superlattice thermoelectric materials and quantum-well and quantum-dot structured materials have been proposed. However, there exists a need to produce thin-film thermoelectric devices with a good thermoelement aspect-ratio for em-thick thin-films, and a need to easily interconnect these thermoelements. The thin-film thermoelectric devices should also be scalable to a variety of heat loads and manufacturable in large volume (area). The methods used to manufacture the devices must be amenable to automation, compatible with cascading or multi-staging (leading to a smaller &Dgr;T per stage for a higher coefficient of performance in a refrigerator or for higher efficiency in a power generator) and is equally applicable to both cooling and power generation. Further, the device technology would enable the insertion of high-ZT thin-films into high performance cooling devices while keeping the current levels compatible with present-day coolers and similar power generation devices.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a thin-film thermoelectric device and a method of manufacturing the device that achieves high material utilization efficiency.
Another object of the present invention is to provide a thin-film thermoelectric device and a method of manufacturing the device that achieves high cooling/packing density.
A further object of the present invention is to provide a thin-film thermoelectric device and a method of manufacturing the device that is scalable to a variety of heat loads.
A still further object of the present invention to provide and manufacture large area thin-film thermoelectric devices.
Still another object is provide a thermoelectric elements that can be used with low-cost power supplies.
These and other objects are achieved by a thermoelectric device having a plurality of thermoelectric elements (i.e. a plurality of thermoelements) formed using thin films in the range of microns to tens of microns. The elements may be arranged in a matrix pattern with adjacent rows having opposite conductivity type. The elements are disposed on a header with a pattern of conductive members. Pairs of adjacent elements of opposite conductivity type are disposed on and connected by the conductive members. A second header with a second pattern of conductive members is disposed on top of the elements. The conductive members of the second header connect adjacent pairs of connected elements so that the pairs are connected in series.
These and other objects are also achieved by a method of forming a thermoelectric device. In one embodiment, thin films having a thickness on the order of microns to tens of microns are formed on a substrate. Films of opposite conductivity type may be formed on different substrates or one film may be formed and later selectively doped to provide regions of opposite conductivity. The film or films are disposed on the first header and the substrates removed. When films of opposite conductivity type are used, they are arranged in an alternating manner. The films are patterned to provide a plurality of thermoelectric elements in a matrix pattern. Pairs of elements, one of each conductivity type are disposed on respective conductive members on the first header. A second header is disposed on the top of the elements. Conductive members on the second header contact the pairs such that the pairs are connected in series.
The device and method according to the invention are scalable to a variety of heat loads and is manufacturable in volume. They are amenable to automation and are compatible with cascading or multistaging. Further, the device and method are applicable to both cooling and power generation.
REFERENCES:
patent: 4149025 (1979-04-01), Niculescu
patent: 4493939 (1985-01-01), Blaske et al.
patent: 5006505 (1991-04-01), Skertic
patent: 5411599 (1995-05-01), Horn et al.
patent: 5436467 (1995-07-01), Elsner et al.
patent: 5900071 (1999-05-01), Harman
patent: 5952728 (1999-09-01), Imanishi et al.
patent: 6060656 (2000-05-01), Dresselhaus et al.
patent: 6107645 (2000-08-01), Hidaka
Lebentritt Michael
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Research Triangle Institute
LandOfFree
Thin-film thermoelectric device and fabrication method of same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin-film thermoelectric device and fabrication method of same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film thermoelectric device and fabrication method of same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2595131