Thin-film temperature-sensitive resistor material and production

Details Thin-film temperature-sensitive resistor material and production Thin-film temperature-sensitive resistor material and production

1998-05-19

2000-10-03

Gellner, Michael L.

Electrical resistors

Resistance value responsive to a condition

Current and/or voltage

338 22SD, 338 25, H01C 710

Patent

active

061279145

ABSTRACT:
Described are a thin-film temperature-sensitive resistor material which comprises, at a temperature-sensitive resistor portion, a mixed crystal of a nitride and oxide of a transition metal such as vanadium preferably, that represented by the formula: MN.sub.x O.sub.y wherein 0<x<1, and 2.ltoreq.y.ltoreq.13/6, simultaneously exhibits a high temperature coefficient of resistance and a low specific resistance at about room temperature, and has excellent sensitivity at about room temperature; and a process for the production of a thin-film temperature-sensitive resistor material, which comprises forming its temperature-sensitive resistor portion by using a gas-atmosphere composed mainly of a nitrogen gas preferably, a mixed gas composed of nitrogen, argon and oxygen, and has a flow rate ratio of nitrogen to oxygen (nitrogen/oxygen) of 14/1 to 23/1.

REFERENCES:
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patent: 4562057 (1985-12-01), Goddard et al.
patent: 5247278 (1993-09-01), Pant et al.
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patent: 5583436 (1996-12-01), Van De Walle et al.
patent: 5689185 (1997-11-01), Widdershoven et al.
patent: 5805049 (1998-09-01), Yamada et al.
Jerominek et al., "Vanadium oxide films for optical switching and detection", Optical Engineering, vol. 32, No. 9, Sep. 1993, pp. 2092-2099.

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