Thin film tantalum oxide capacitors and resulting product

Details Thin film tantalum oxide capacitors and resulting product Thin film tantalum oxide capacitors and resulting product

1997-03-06

1999-08-10

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361305, 361311, 3613215, H01G 4005, H01G 406

Patent

active

059368314

ABSTRACT:
In accordance with the invention, a thin film capacitor including a dielectric of nitrogen or silicon-doped tantalum oxide and at least one electrode including chromium. Preferably the capacitor is fabricated by anodically oxidizing TaN.sub.x or Ta.sub.2 Si and forming a Cr counterelectrode. The method is fully compatible with MCM processing. It produces anodic Ta.sub.2 O.sub.5 capacitors having exceptionally low leakage currents (<1 nA/cm.sup.2 at 10 V), high breakdown fields (>4 MV/cm) and high capacitance densities (70 nF/cm.sup.2). The devices are stable at 350.degree. C. with excellent capacitor properties and are particularly useful as thin film capacitors of large area (>1 mm.sup.2).

REFERENCES:
patent: 5264728 (1993-11-01), Ikeda et al.
patent: 5696017 (1997-12-01), Ueno

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