Thin-film switching elements for electronic devices and a method

Details Thin-film switching elements for electronic devices and a method Thin-film switching elements for electronic devices and a method

1997-08-12

2000-08-08

Parker, Kenneth

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349 43, 257257, 257 30, 438181, 438299, 438957, G02F 1135, G02F 1136

Patent

active

061009512

ABSTRACT:
Thin-film switching elements (20,21) of a display device or the like include a first electrode (22,23) on a substrate (11) and a layer of switching material (24,25) on the first electrode. These switching elements may be semiconductor PIN or Schottky diodes, or MIMs, or TFTs. The switching material is typically .alpha.-Si:H in the case of the semiconductor diodes and TFTs, and tantalum oxide or silicon nitride in the case of the MIMs. An auxiliary layer (28,29) of insulating material is provided between the first electrode (22,23) and the layer of switching material (24,25), leaving an edge (30,31) of the first electrode uncovered, so that the layer of switching material is connected to this edge only. The switching elements with this construction can be patterned using an inexpensive proximity printer, and have a low capacitance value, so counter-acting kickback and crosstalk which can occur in a switching matrix, e.g in the display of television pictures.

REFERENCES:
patent: 5142390 (1992-08-01), Ohta et al.
patent: 5253092 (1993-10-01), Takahashi
patent: 5859678 (1999-01-01), Fujikawa et al.

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