Etching a substrate: processes – Etching to produce porous or perforated article
Reexamination Certificate
2008-05-21
2011-10-25
Ahmed, Shamim (Department: 1713)
Etching a substrate: processes
Etching to produce porous or perforated article
C216S017000, C216S018000, C216S041000, C216S058000, C205S080000, C205S241000, C205S261000, C205S291000, C428S131000, C096S004000
Reexamination Certificate
active
08043519
ABSTRACT:
In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the metal plate exposed within the through holes, from the side of the conductive base member where the metal plate is not attached, thereby to fill up the through holes, in a film forming process, a Pd alloy film is formed by plating on the surface of the conductive base member after removal of the metal plate, and in a removal process, the copper plating layer is removed by selective etching, thereby to produce a hydrogen production filter that is used in a reformer a fuel cell so as to be capable of stably producing high purity hydrogen gas.
REFERENCES:
patent: 3505180 (1970-04-01), Brodgden
patent: 5651900 (1997-07-01), Keller et al.
patent: 5753014 (1998-05-01), Van Rijn
patent: 5824435 (1998-10-01), Kawano et al.
patent: 6171512 (2001-01-01), Sakaguchi et al.
patent: 6494937 (2002-12-01), Edlund et al.
patent: 6890617 (2005-05-01), Yamaguchi et al.
patent: 6911573 (2005-06-01), Chen et al.
patent: 6994902 (2006-02-01), Fukunaga et al.
patent: 7241396 (2007-07-01), Yagi et al.
patent: 2002/0004180 (2002-01-01), Hotta et al.
patent: 2007/0175764 (2007-08-01), Yagi et al.
patent: 1-131004 (1989-05-01), None
patent: 4-326931 (1992-11-01), None
patent: 5-53527 (1993-08-01), None
patent: 5-317662 (1993-12-01), None
patent: 11-104472 (1999-04-01), None
patent: 11-286785 (1999-10-01), None
U.S. Appl. No. 12/124,240, filed May 21, 2008, Yagi, et al.
U.S. Appl. No. 12/831,416, filed Jul 7, 2010, Yagi, et al.
Maeda Takanori
Oota Yoshinori
Uchida Yasuhiro
Yagi Hiroshi
Ahmed Shamim
Dai Nippon Insatsu Kabushiki Kaisha
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
LandOfFree
Thin film support substrate for use in hydrogen production... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film support substrate for use in hydrogen production..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film support substrate for use in hydrogen production... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4297128