Thin film superconductor with an interlayer on a silicon substra

Details Thin film superconductor with an interlayer on a silicon substra Thin film superconductor with an interlayer on a silicon substra

1993-12-27

1995-05-16

Ryan, Patrick J.

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Superconductor next to two or more nonsuperconductive layers

428688, 428689, 428930, 505235, 505701, 505236, 505238, 505239, B32B 900

Patent

active

054160626

ABSTRACT:
A thin film of oxide superconductor deposited on a single crystal substrate of silicon wafer. A buffer layer of (100) or (110) oriented Ln.sub.2 O.sub.3, in which Ln stands for Y or lanthanide elements is interposed between the thin film of oxide superconductor and the silicon wafer. A surface of silicon wafer is preferably cleaned satisfactorily by heat-treatment in vacuum before the buffer layer is deposited. An under-layer of metal oxide; ZrO.sub.2, YSZ or metal Y, Er is preferably interposed between the Ln.sub.2 O.sub.3 buffer layer and the silicon wafer.

REFERENCES:
patent: 5015623 (1991-05-01), Scholten
patent: 5122509 (1992-06-01), Beetz et al.
Geballe, "Paths to Higher Temp. Super Science" vol. 259, Mar. 12, 1993 pp. 1550-1551.
"Cuprate Superconductors: Record 133K achieved w/Mercury", May 10, 1993 CbeN, pp. 4-5.
Myoren, et al. Jap. Jour. of App. Phys. vol. 29, pp. L955-L957 (Jun. 1990).
Pool, "Superconductor Material Problems", Science Apr. 1, 1988, vol. 240, pp. 25-27.

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