Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-04-28
1996-02-13
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257 88, 257 89, 359 54, 359 55, 359 57, 359 58, 359 59, H01L 3300
Patent
active
054913470
ABSTRACT:
A thin-film structure on an insulating substrate includes an array of binary control units with an area of at least 90 cm.sup.2 and a density of at least 60 binary control units per cm. One implementation has an area of approximately 510 cm.sup.2, a diagonal of approximately 33 cm, and a total of approximately 6.3 million binary control units. Each binary control unit has a lead for receiving a unit drive signal, to which it responds by causing presentation of a segment of images presented by the array. Each binary control unit can present a segment with either a first color having a maximum intensity or a second color having a minimum intensity. Each binary control unit's unit drive signal causes the binary control unit to present its first and second colors. The substrate can be glass. Each binary control unit can include an amorphous silicon thin-film transistor (TFT) and a storage capacitor. Each binary control unit can be square. The thin-film structure can be used in an active matrix liquid crystal display (AMLCD), monochrome or, with an appropriate filter, color.
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Allen, deceased Robert R.
Bruce Richard H.
Chuang Tzu-Chin
Fiske Thomas G.
Fulks Ronald T.
Mintel William
Xerox Corporation
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