Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Patent
1991-07-19
1993-01-05
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
257 3, 257760, H01L 4500, H01L 2702
Patent
active
051775670
ABSTRACT:
Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material beneath the body of chalcogenide material so as to carefully define the filament location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eliminated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of insulator material which is deposited only after the chalcogenide material has been formed. This improved structure demonstrates the advantages of higher fabrication yields and more repeatable electrical switching characteristics.
REFERENCES:
patent: 3611063 (1971-10-01), Neale
patent: 3846767 (1974-11-01), Cohen
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4804490 (1989-02-01), Pryor et al.
patent: 4809044 (1989-02-01), Pryor et al.
patent: 4845533 (1989-07-01), Pryor et al.
Jablonski David C.
Klersy Patrick J.
Ovshinsky Stanford R.
Energy Conversion Devices Inc.
Hille Rolf
Saadat Mahshid
Siskind Marvin S.
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