Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2006-02-14
2006-02-14
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S050000, C438S052000
Reexamination Certificate
active
06998286
ABSTRACT:
A thin film made of an amorphous material having a supercooled liquid phase region is formed on a substrate. Then, the thin film is heated to a temperature within the supercooled liquid phase region and is deformed by its weight, mechanical external force, electrostatic external force or the like, thereby to form a thin film-structure. Thereafter, the thin film-structure is cooled down to room temperature, which results in the prevention of the thin film's deformation.
REFERENCES:
patent: 5827343 (1998-10-01), Engelke et al.
patent: 5950704 (1999-09-01), Johnson et al.
patent: 5994159 (1999-11-01), Aksyuk et al.
patent: 6759261 (2004-07-01), Shimokohbe et al.
patent: 0 762176 (1997-03-01), None
patent: 0 783108 (1997-07-01), None
patent: A-9-126833 (1997-05-01), None
patent: A-9-237906 (1997-09-01), None
patent: A-9234630 (1997-09-01), None
patent: A-11-58244 (1999-03-01), None
Barsoum, “Fundamentals of Ceramics”, Chapter 9, p 311-317, McGraw-Hill Companies, Inc., (1997).
Busch et al., Appl. Phys. Lett., vol. 72(21), p 2695-2697, (1998).
Saotome et al., “Suparplastic Micro-forming of Microstructures”, Proceedings, IEEE Workshop on Micro Electro Mechanical Systems, p 343-348, 1994.
Inoue et al., “Al-La-Ni Amorphous Alloys With a Wide Supercooled Liquid Region”, Materials Transactions, JIM, vol. 30, p 965-972 (1989).
Saotome et al., “Microforming of MEMS parts with Amorphous Alloy”, Materials Research Symposium (Meeting Date: Dec. 1998)—proceedings, vol. 554 (1999).
Inoue et al., Micro-Forming of Amorphous Alloys. Amorphous Micro-Gear Forming, Kinzoku vol. 63(3), p51-57 (1993).
Hata Seiichi
Shimokohbe Akira
Oliff & Berridg,e PLC
Sarkar Asok Kumar
Tokyo Institute of Technology
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