Thin film strain gage and process therefor

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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C23C 1500

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042216494

ABSTRACT:
A thin film strain gage is deposited on a flexure beam under controlled deposition conditions such that the dielectric parts thereof are normally in a compressive state. During use, when the strain gage is flexed in a manner tending to place parts thereof in tension, the dielectric parts are instead maintained either in compression, which is their more resistant state against mechanical fracture, or only in slight tension. Specifically, the dielectric films are deposited by sputtering with the substrate negatively biased, with the deposition rate and substrate temperature maintained at predetermined levels for enhancing compressive deposition.

REFERENCES:
patent: 4104605 (1978-08-01), Boudreaux et al.

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