Thin film strain gage and process therefor

Measuring and testing – Volumetric content measuring

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

73775, 338 2, G01L 122

Patent

active

041854969

ABSTRACT:
A thin film strain gage is deposited on a flexure beam under controlled deposition conditions such that the dielectric parts thereof are normally in a compressive state. During use, when the strain gage is flexed in a manner tending to place parts thereof in tension, the dielectric parts are instead maintained either in compression, which is their more resistant state against mechanical fracture, or only in slight tension. Specifically, the dielectric films are deposited by sputtering with the substrate negatively biased, with the deposition rate and substrate temperature maintained at predetermined levels for enhancing compressive deposition.

REFERENCES:
patent: 3080748 (1963-03-01), Burkley
patent: 3596269 (1971-07-01), Laska
patent: 3986254 (1976-10-01), Nordstrom
patent: 4104605 (1978-08-01), Boudreaux

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film strain gage and process therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film strain gage and process therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film strain gage and process therefor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-875472

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.