Thin film solar cells by selenization sulfurization using...

Details Thin film solar cells by selenization sulfurization using... Thin film solar cells by selenization sulfurization using...

2007-05-08

2009-12-15

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S057000, C438S085000, C257SE31001, C257SE27123

Reexamination Certificate

active

07632701

ABSTRACT:
A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

REFERENCES:
patent: 5436204 (1995-07-01), Albin et al.
patent: 5674555 (1997-10-01), Birkmire et al.
patent: 7582506 (2009-09-01), Basol
patent: 2005/0186342 (2005-08-01), Sager et al.
Deryagina, E.N., et al. “Selenium- and tellurium-centred radicals,” Russian Chemical Reviews 62(12), p. 1107-1117. Russian Academy of Sciences and Turpion Ltd.: 1993.

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