Thin film solar cell with ZnO window layer

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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29572, 357 16, 357 30, 427 74, 427 86, H01L 3106

Patent

active

046124110

ABSTRACT:
A thin film photovoltaic device comprising a first layer of copper indium diselenide p-type semiconductor and a second layer of n-type zinc oxide semiconductor. In a preferred form, the first portion of the zinc oxide film at the junction with the CIS is undoped to have relatively high resistivity, while the remaining portion thereof is doped to achieve low resistivity. The zinc oxide is preferably deposited by a low temperature chemical vapor deposition process.

REFERENCES:
M. S. Tomar et al, Thin Solid Films, vol. 90, pp. 419-423 (1982).

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