Thin-film solar cell and method of manufacturing same

Details Thin-film solar cell and method of manufacturing same Thin-film solar cell and method of manufacturing same

1994-03-16

1996-04-16

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

257 53, 257 55, 257431, 257458, 427579, 437 4, 437101, 437113, H01L 31075, H01L 3120

Patent

active

055078818

ABSTRACT:
Solar cells are formed of (a) a transparent substrate; (b) a transparent electrode; (c) a first doped layer comprising amorphous silicon oxide, optionally including nitrogen, said first doped layer containing a dopant whereby the first doped layer is of a first conductivity type and has an optical gap of from 2.0 to 2.3 eV and a ratio of light conductivity to dark conductivity of 5 or less at 25.degree. C.; (d) a layer of intrinsic amorphous silicon; (e) a second doped layer comprising amorphous silicon, said second doped layer containing a dopant whereby the second doped layer is of a second conductivity type different from the first conductivity type; and (f) a second electrode. The first doped layer may be of either n-type or p-type conductivity. The first doped layer can be formed over the transparent electrode by decomposing a gas mixture comprising SiH.sub.4, an oxygen source gas selected from N.sub.2 O or CO.sub.2, and a dopant, in a hydrogen carrier at a substrate temperature of 150.degree. to 250.degree. C., the amount of hydrogen being from 10 to 50 times the amount of SiH.sub.4, said first doped layer being of a first conductivity type. An interfacial layer of intermediate gap may also be included when the first doped layer is a p-type layer. Also described is a method for the formation of an amorphous silicon-oxide film to be utilized in making the thin-film solar cell.

REFERENCES:
patent: 5140397 (1992-08-01), Haga et al.
patent: 5391410 (1995-02-01), Nii et al.

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