Thin-film SOI MOSFET

Details Thin-film SOI MOSFET Thin-film SOI MOSFET

1993-05-10

1994-08-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 69, 257347, H01L 2904, H01L 27108, H01L 2701

Patent

active

053430514

ABSTRACT:
An MOS field effect transistor comprises a channel region (6) of a first conductivity type formed in a semiconductor layer (3) on an insulator substrate (2), a source region (8) and a drain region (9) of a second conductivity type formed in contact with one and the other sides of the channel region (6) in the semiconductor layer (3), respectively, a body region (7) formed in contact with at least a part of the channel region (6) and a part of a periphery of the source region (8) in the semiconductor layer (3) and having a higher impurity concentration than that of the channel region (6), a gate electric thin film (4) and a gate electrode (5) formed on the channel region (6), and a conductor (14a) connected in common to the source region (8) and the body region (7).

REFERENCES:
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 4054895 (1977-10-01), Ham
patent: 4106045 (1978-08-01), Nishi
patent: 4969023 (1990-11-01), Svedberg
patent: 4999691 (1991-03-01), Hsu et al.
patent: 5045487 (1991-09-01), Kadoma et al.
patent: 5075746 (1991-12-01), Hayashi et al.
patent: 5125007 (1992-06-01), Yamaguchi et al.
Jean-Pierre Colinge, "Reduction of Kink Effect in Thin-Film SOI MOSFET's", IEEE Electron Device Letters, vol. 9, No. 2, Feb. 1988, pp. 97-99.

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