Thin film single crystal substrate

Details Thin film single crystal substrate Thin film single crystal substrate

1988-03-09

1994-12-13

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 78, 257258, 437 84, 437100, H01L 2710

Patent

active

053731719

ABSTRACT:
A thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide, silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride, and optionally an intermediate layer between the base substrate and the thin film of single crystal, which optionally comprises an intermediate layer between the base substrate and the thin film of single crystal.

REFERENCES:
patent: 4028149 (1977-06-01), Deines
patent: 4254429 (1981-03-01), Yamazaki
patent: 4661176 (1987-04-01), Manasevit
patent: 4751554 (1988-06-01), Schnable
patent: 4762806 (1988-08-01), Suzaki

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