Thin-film silicon solar cell with metal boride bottom electrode

Details Thin-film silicon solar cell with metal boride bottom electrode Thin-film silicon solar cell with metal boride bottom electrode

1980-08-04

1982-02-02

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

136258, 148174, 148187, 148191, 357 30, 357 65, 427 74, H01L 3118

Patent

active

043132545

ABSTRACT:
The invention relates to an improved thin film semiconductor p-n junction device and its method of fabrication, utilizing vacuum deposition techniques, whereby continuous/batch processing may be utilized, capable of mass producing p-n junction devices; e.g. solar cells, with large surface areas and good operating efficiency and at low cost. A novel feature of the proposed device and its method of fabrication is the formation of the bottom electrode of the device, located between the nonconducting substrate and the overlying silicon semiconductor layer, as a metal boride region which possesses several characteristics particularly necessary to the fabrication of thin film silicon solar cells for example, having improved structural and operating properties, as well as good operating efficiency.

REFERENCES:
patent: 3914856 (1975-10-01), Fang
patent: 4113532 (1978-09-01), Authier et al.
C. Feldman et al., "Vacuum Deposited Polycrystalline Silicon Solar Cells", Conf. Record, 12th IEEE Photovoltaic Specialists Conf. (1976), pp, 100-105.
C. Feldman et al., "Evaluation of Vacuum Deposited Silicon Films & Junctions _for Solar Cell Applications", Proc. Nat'l. Workshop on Low Cost Polycrystalline Silicon Solar Cells, May 1976, Dallas, Texas, pp. 267-291.
H. K. Charles et al., "p-n Junctions in Vacuum Deposited Polycrystalline Silicon Thin Films", IEDM Tech. Digest, pp. 71-74 (1976).
C. Feldman et al., "Evaporated Polycrystalline Silicon Films for Photovoltaic Applications-Grain Size Effects," J. Electronic Materials, vol. 7, pp. 309-336 (1978).
C. Feldman et al., "Vacuum Deposited Polycrystalline Silicon Solar Cells for Terrestrial Use", Conf. Record, 14th IEEE Photovoltaic Specialists Conf. (1980), pp. 391-396.

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