Patent
1988-07-21
1992-07-21
Jackson, Jr., Jerome
357 4, 357 59, H01L 2701, H01L 2713, H01L 2978
Patent
active
051327546
ABSTRACT:
A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.
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Okamoto Akio
Serikawa Tadashi
Shirai Seiichi
Suyama Shirou
Dang Hung Xuan
Jackson, Jr. Jerome
Nippon Telegraph and Telephone Corporation
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