Thin-film semiconductor epitaxial substrate having boron...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

Reexamination Certificate

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C257S200000

Reexamination Certificate

active

06914274

ABSTRACT:
A thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, wherein boron (B) added is present in at least a part of a layer portion comprising said sub-collector layer and said collector layer.

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Y.F. Yang et al., A GaInP/GaAs HBT with a Selective Buried Sub-Collector Layer Grown by MOCVD. IEEE 1996, pp. 34-35.
J.J. Liou et al., Base and Collector Leakage Currents and Their Relevance to the Reliability of AlGaAs/GaAs Heterojunction Bipolar Transistors. IEEE 1994, pp. 446-453.
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C.M. Wang et al., High Linearity InGasP/GaAs Power HBTs by Collector Design. IEEE 2004, pp. 58-60.

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