Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2006-09-12
2006-09-12
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S223000, C257S227000, C257S291000, C257S412000
Reexamination Certificate
active
07105872
ABSTRACT:
The invention provides a thin film semiconductor element and a method of manufacturing the same to achieve lowering the resistance of gate electrodes, lowering the capacitance of source electrodes, and enhancing etching characteristics. The thin film semiconductor element can include a semiconductor film provided on a substrate, source and drain electrodes connected to the semiconductor film, and a gate electrode provided on the semiconductor film with an insulating film interposed therebetween. The film thickness of the source and drain electrodes can be smaller than the film thickness of the gate electrode.
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Louie Wai-Sing
Oliff & Berridg,e PLC
Seiko Epson Corporation
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