Thin film semiconductor device with gate metal oxide and sidewal

Details Thin film semiconductor device with gate metal oxide and sidewal Thin film semiconductor device with gate metal oxide and sidewal

1994-08-16

1996-11-19

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 66, 257 72, 257344, 257391, 257408, H01L 27092, H01L 2904, H01L 29786

Patent

active

055765564

ABSTRACT:
A monolithic circuit comprises a plurality of thin film transistors. Source and drain regions of the TFT are provided with a metal silicide layer having a relatively low resistivity. Thereby, the effective distance between a gate and a source/drain electrode can be reduced.

REFERENCES:
patent: 4336550 (1982-06-01), Medwin
patent: 4468855 (1984-09-01), Sasaki
patent: 4554572 (1985-11-01), Chatterjee
patent: 4899202 (1990-02-01), Blake et al.
patent: 4923822 (1990-05-01), Wang et al.
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5308998 (1994-05-01), Yamazaki
patent: 5359219 (1994-10-01), Hwang
Kistler et al, IEEE Elec. Dev. Lettr vol. 13 No. 5 May 1992 "Sub-Quarter-Micrometer . . . SOI".

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