Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1993-04-09
1994-11-22
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257488, H01L 2978, H01L 2712
Patent
active
053671805
ABSTRACT:
The invention is based on a thin-film semiconductor FET device. A field plate electrode for producing an electric field is formed on a channel-protecting film above the end of the gate electrode that is on the side of an offset region. Stable transistor characteristics can be maintained for a long time with the field plate electrode voltage set to a low value. The drain electrode is coated with a film of an anticorrosion metal. Where an integrated circuit with a high device density is fabricated from semiconductor devices of this construction, the drain electrodes are effectively prevented from being corroded.
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Ratnam, Electronics Letts Apr. 13, 1989 vol. 25 No. 8 pp. 537-538 "Noval Silicon-on Insulator . . . Circuits".
Hack, M. et al., "Physics of Novel Amorphous Silicon High-Voltage Transistor", Mat. Res. Soc. Symp. Proc., vol. 95, pp. 457-462.
Martin, R. A. et al., "Enhancement of Performance and Reliability of Amorphous Silicon High Voltage Thin Film Transistors by use of Field Plates", IEEE, IEDM 89-341, pp. 13.2.1-13.2.4.
Asai Ichiro
Nakamura Takeshi
Tomono Takao
Fuji 'Xerox Co., Ltd.
Jackson Jerome
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