Thin film semiconductor device with a semiconductor large includ

Details Thin film semiconductor device with a semiconductor large includ Thin film semiconductor device with a semiconductor large includ

1994-05-05

2000-10-31

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 64, 257462, H01L 2904

Patent

active

06140666&

ABSTRACT:
A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the insulative layer. The semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 .ANG. and an amorphous layer.

REFERENCES:
patent: 4951113 (1990-08-01), Huang et al.
patent: 4979006 (1990-12-01), Tanaka et al.
patent: 5002618 (1991-03-01), Kanai et al.
patent: 5184200 (1993-02-01), Yamanobe

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