Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-07-25
1998-08-18
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 72, H07L 29786
Patent
active
057961166
ABSTRACT:
A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain electrode, wherein the semiconductor film includes an i-type silicon film, and a portion or the semiconductor film within 50 nm from the insulating film has a microcrystalline structure having a conductivity of 5.times.10.sup.-10 S/cm or more.
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Ayukawa Michiteru
Date Masahiro
Fujihara Masaki
Itoga Takashi
Matsuo Takuya
Hardy David B.
Sharp Kabushiki Kaisha
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