Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-08-27
2000-01-04
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257252, 257233, 257254, 257417, 257418, 257419, 338 99, H01L 2978
Patent
active
060112735
ABSTRACT:
The present invention provides a thin-film semiconductor device suitable for an areal-pressure-distribution detector and the like. The thin-film semiconductor device according to the present invention comprises an insulating substrate 1, and element regions R being integrated and arranged on the substrate in the form of a matrix and each including a set of mutually connected electrode 2 and thin-film transistor 3. Each electrode 2 senses a signal voltage applied from above the element region R. Meanwhile, the thin-film transistor 3 are on/off-controlled in order and detect the signal voltage applied to the corresponding electrodes 2. In each element region, the surface level H1 of the sensitive region SR where the major part of the electrode 2 is formed is higher by .DELTA.H than the surface level H2 of the non-sensitive region NSR where the corresponding thin-film transistor 3 and a wiring pattern 9 are formed.
Ichikawa Hiroaki
Kadota Hisashi
Abraham Fetsum
Kananen Ronald P.
Sony Corporation
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