Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1991-12-02
1994-03-15
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257 66, 257 72, 257347, H01L 2904, H01L 2701, H01L 31036
Patent
active
052948110
ABSTRACT:
TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.
REFERENCES:
patent: 5040875 (1991-08-01), Noguchi
patent: 5075746 (1991-12-01), Hayashi et al.
patent: 5142344 (1992-08-01), Yamazaki
IEEE Transaction on Electron Device, 36, pp. 2868-2872 (1989) "High-Performance TFT's Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film" by Sera et al.
Aoyama Takashi
Mochizuki Yasuhiro
Momma Naohiro
Ogawa Kazuhiro
Usami Katsuhisa
Hille Rolf
Hitachi , Ltd.
Loke Steven
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