Thin-film semiconductor device having an .alpha.-tantalum first

Details Thin-film semiconductor device having an .alpha.-tantalum first Thin-film semiconductor device having an .alpha.-tantalum first

1991-02-26

1992-08-18

Mintel, William

357 71, 357 65, H01L 2354

Patent

active

051404036

ABSTRACT:
In a reverse staggered MOS transistor, a gate electrode and a signal wiring connected to the gate electrode consist of a wiring base on the substrate side and an overlying wiring part superposed on the wiring base. The wiring base is composed of a conductive material, e.g., tantalum-molybdenum alloy, which has a body-centered cubic lattice structure with its lattice constants the same as or approximately identical to those of .alpha.-tantalum. Being continuously deposited on the wiring base by sputtering, the overlying wiring part also assumes the .alpha.-tantalum form inheriting the lattice structure of the wiring base. In the case of a staggered MOS transistor, source and drain electrodes and respective signal wirings connected to the source and drain electrodes take the similar structure.

REFERENCES:
patent: 3878079 (1975-04-01), Schauer
patent: 4364099 (1982-12-01), Koyama et al.
patent: 4905066 (1990-02-01), Dohjo et al.
patent: 4975760 (1990-12-01), Dohjo et al.
patent: 5028551 (1991-07-01), Dohjo et al.
patent: 5067007 (1991-11-01), Kanji et al.

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