Thin film semiconductor device for active matrix panel

Details Thin film semiconductor device for active matrix panel Thin film semiconductor device for active matrix panel

1997-10-15

1999-08-03

Beck, Shrive

Semiconductor device manufacturing: process

Chemical etching

438125, 438149, 438311, 438496, 438669, 438778, 438795, 438902, H01L 21331, H01L 2100

Patent

active

059324848

ABSTRACT:
A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers the element. A hydrogenation treatment which comprises the interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.

REFERENCES:
patent: 4906587 (1990-03-01), Blake
patent: 4943837 (1990-07-01), Konishi et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5712946 (1998-01-01), Takahashi et al.

Affiliated with

Also associated with

Rating

Thin film semiconductor device for active matrix panel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film semiconductor device for active matrix panel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film semiconductor device for active matrix panel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-849068