Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-09-19
2009-12-29
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE21090, C257SE29003, C257S347000, C438S486000, C438S458000
Reexamination Certificate
active
07638806
ABSTRACT:
The present invention is to provide a thin film semiconductor device including a semiconductor thin film and an interlayer insulating film configured to cover the semiconductor thin film. In the interlayer insulating film, a hydrogen supply part and a blocking part against contamination are deposited in that order from a semiconductor thin film side.
REFERENCES:
patent: 5885858 (1999-03-01), Nishimura et al.
patent: 2004/0016924 (2004-01-01), Yamada et al.
patent: 11-111989 (1999-04-01), None
patent: 2001-125142 (2001-05-01), None
patent: 2004-007004 (2004-01-01), None
Abe Kaoru
Kubota Shinji
Morita Hiroaki
Shiotani Tomohiro
Diallo Mamadou
Richards N Drew
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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