Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2005-12-06
2005-12-06
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S460000, C257S620000
Reexamination Certificate
active
06972215
ABSTRACT:
A semiconductor device is manufactured using the method including the steps of anodizing a semiconductor substrate to form a porous semiconductor layer on a semiconductor region of the semiconductor substrate; forming a non-porous semiconductor layer on the porous semiconductor layer; forming a semiconductor element and/or semiconductor integrated circuit in the non-porous semiconductor layer; forming kerfs from a surface side of the non-porous semiconductor layer toward the semiconductor region; and applying a pressure of a fluid to the porous semiconductor layer such that the desired region of the semiconductor element and/or semiconductor integrated circuit is separated from the semiconductor substrate.
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Sakaguchi Kiyofumi
Yonehara Takao
Canon Kabushiki Kaisha
Fitzpatrick, Cella, Harper and Scinto
Le Thao X.
Pham Long
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