Thin film semiconductor device and manufacturing method

Details Thin film semiconductor device and manufacturing method Thin film semiconductor device and manufacturing method

2007-05-29

2007-05-29

Pham, Thanhha S. (Department: 2813)

Amplifiers

With semiconductor amplifying device

Including differential amplifier

C330S261000

Reexamination Certificate

active

10657196

ABSTRACT:
When n-channel thin film transistors(TFTs) and p-channel TFTs are formed on a polycrystalline silicon film formed on a glass substrate, a process is included in which P-dopant or N-dopant is introduced at the same time to the channel region of a part of the n-channel TFTs and a part of the p-channel TFTs. In one channel doping operation, a set of low-VT and high-VT p-channel TFTs and a set of low-VT and high-VT n-channel TFTs can be formed. This method is used for forming high-VT TFTs, which can reduce the off-current, in logics and switch circuits and for forming low-VT TFTs, which can enlarge the dynamic range, in analog circuits to improve the performance of a thin film semiconductor.

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