Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-05-16
2010-10-12
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S350000, C257S408000, C257S903000, C257SE27098, C257SE29151
Reexamination Certificate
active
07812351
ABSTRACT:
A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
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Fukunaga Takeshi
Koyama Jun
Miyanaga Akiharu
Yamazaki Shunpei
Fish & Richardson P.C.
Ngo Ngan
Semiconductor Energy Laboratory Co,. Ltd.
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