Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2004-09-15
2009-02-10
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S066000, C257S347000
Reexamination Certificate
active
07488980
ABSTRACT:
A relaying pad is formed in a predetermined portion in an insulation layer of the single-crystal thin film device, in a region where the single-crystal thin film device is formed. The relaying pad is for providing connection wiring through the insulator substrate. With this configuration it is possible to prevent an increase in an aspect ratio of a contact hole formed in an insulation layer in a region in which a transferred device is formed, the semiconductor device including a substrate on which the transferred device and a deposited device coexist.
REFERENCES:
patent: 4612083 (1986-09-01), Yasumoto et al.
patent: 5589419 (1996-12-01), Ochiai
patent: 5637187 (1997-06-01), Takasu et al.
patent: 6067062 (2000-05-01), Takasu et al.
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6355501 (2002-03-01), Fung et al.
patent: 6392253 (2002-05-01), Saxena
patent: 6429484 (2002-08-01), Yu
patent: 6503778 (2003-01-01), Yamauchi et al.
patent: 6590227 (2003-07-01), Ishikawa
patent: 7387919 (2008-06-01), Kwak et al.
patent: 7408193 (2008-08-01), Ishikawa
patent: 2002/0030189 (2002-03-01), Ishikawa
patent: 1 453 093 (2004-09-01), None
patent: 59-48950 (1984-03-01), None
patent: 5-41478 (1993-02-01), None
patent: 5-267563 (1993-10-01), None
patent: 8-139333 (1996-05-01), None
patent: 11-24106 (1999-01-01), None
patent: 93/15589 (1993-08-01), None
patent: 03/041167 (2003-05-01), None
Sailer et al, “Creating 3D Circuits Using Transferred Films”, IEEE Circuits and Devices Magazine, IEEE Service Center, Piscataway, NJ, vol. 13, No. 6, Nov. 1997, pp. 27-30.
Salemo et al, “Single Crystal Silicon AMLCDs”, Conference Record of the 1994 International Display Research Conference (IDRC), 1994, pp. 39-44.
Tong et al; “Semiconductor Wafer Bonding: Science and Technology”, John Wiley & Sons, Inc., 1999.
Itoga Takashi
Ogawa Yasuyuki
Takafuji Yutaka
Nguyen Cuong Q
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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