Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2007-06-26
2008-10-28
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S066000, C257S349000, C257SE29003
Reexamination Certificate
active
07442958
ABSTRACT:
A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
REFERENCES:
patent: 5248630 (1993-09-01), Serikawa et al.
patent: 6501095 (2002-12-01), Yamaguchi et al.
patent: 6670638 (2003-12-01), Tamura et al.
patent: 6737672 (2004-05-01), Hara et al.
patent: 2001/0001745 (2001-05-01), Im et al.
patent: 2002/0006701 (2002-01-01), Yamamoto
patent: 2002/0031876 (2002-03-01), Hara et al.
patent: 2002/0100909 (2002-08-01), Yamaguchi et al.
patent: 2002/0102823 (2002-08-01), Yamaguchi et al.
patent: 2003/0181043 (2003-09-01), Tanada et al.
patent: 2003/0183875 (2003-10-01), Isobe et al.
patent: 2003/0230749 (2003-12-01), Isobe et al.
patent: 2003/0230750 (2003-12-01), Koyama et al.
patent: A-10-41234 (1989-02-01), None
patent: 7-321339 (1995-12-01), None
patent: A-7-321339 (1995-12-01), None
patent: A-08-55808 (1996-02-01), None
patent: 2000-133807 (2000-05-01), None
patent: 2001-102304 (2001-04-01), None
patent: 2002-124467 (2002-04-01), None
patent: 363726 (1999-07-01), None
patent: 429629 (2001-04-01), None
patent: 478171 (2002-03-01), None
patent: 480730 (2002-03-01), None
S.M. Sze, “Physics of Semiconductor Devices,” Second Edition, 1981, W. Wiley & Songs, New York, NY, USA.
Hatano Mutsuko
Park Sedng-Kee
Shiba Takeo
Tai Mitsuharu
Yamaguchi Shin'ya
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Tran Minh-Loan T
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