Thin film semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C257S072000, C257S349000

Reexamination Certificate

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06969871

ABSTRACT:
In a film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and growth speed of crystals in a Si thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high mobility semiconductor devices and an image display device using these semiconductor devices are realized.

REFERENCES:
patent: 2002/0031876 (2002-03-01), Hara et al.
patent: 2002/0100909 (2002-08-01), Yamaguchi et al.
patent: 2002/0102823 (2002-08-01), Yamaguchi et al.
patent: 2003/0181043 (2003-09-01), Tanada et al.
patent: 2003/0183875 (2003-10-01), Isobe et al.
patent: 2003/0230749 (2003-12-01), Isobe et al.
patent: 2003/0230750 (2003-12-01), Koyama et al.
patent: A-7-321339 (1995-12-01), None
patent: A-08-55808 (1996-02-01), None
patent: A-10-41234 (1998-02-01), None
S. M. Sze, “Physics of Semiconductor Devices,” Second Edition, 1981, John Wiley & Sons, New York, USA.

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